t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 1 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 available on commercial versions schottky barrier diode qualified per mil - prf - 19500/ 444 qualified levels : jan, jantx, and jantxv description th is s chottky barrier diode is meta llurgical ly bonded and offers military grade qualifications for high - reliability applications on ?1n? prefixed numbers . th is small diode is hermetically sealed and bonded into a do - 35 glass package. do - 35 (do - 204ah) package also av ailable in : ub package ( 3 - pi n surface mount) 1n 5711 ub , 1n5712ub (b, cc, ca) do - 213aa package (surface mount) 1n5711ur - 1, 1n5712ur - 1, 1n6857ur - 1, and 1n6858ur - 1 important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n5711 - 1, 1n57 12- 1, 1n6857 - 1, and 1n 6858 - 1 numbers . ? metallurgically bonded . ? jan, jantx, jantxv and commercial qualifications also available per mil - prf - 19500/444 on ?1n? numbers only. ( s ee p art n omenclature for all available opti ons). ? rohs compliant versions available (commercial grade only). applications / benefits ? low reverse leakage characteristics. ? small size for high density mounting using flexible thru - hole leads (see package illustration). ? esd sensitive to class 1. ma xim um ratings @ 25 oc unless otherwise stated msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 - 800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.co m parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +150 oc thermal resistance, junction - to - lead @ lead length = 0.375 inch (9.52 mm) from body r ? jl 250 oc /w average rectified output current: 1n 5711 (1) DSB2810, dsb5712, 1n5712 & 1n6858 (2) 1n 6857 (3) i o 33 75 150 ma solder temperature @ 10 s 260 o c notes: 1. at t l = +130c and l = 0 .375 inch, derate i o to 0 at +150c. 2. at t l = +110c and l = 0 .375 inch, derate i o to 0 at +150c. 3. at t l = +70c and l = 0 .375 inch, derate i o to 0 at +150c.
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 2 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 mechanical and packaging ? case: hermetically sealed glass package. ? terminals: t in / l ead plated or rohs compliant m atte - t in (on commercial grade only) over copper clad steel . s olderable per mil - s td - 750, method 2026. ? polar ity: cathode indicated by band. ? marking: part number. ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? w eight: approximately 0.2 grams. ? see p ackage di mensions on last page. part nomenclature jan 1n 5711 -1 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level cds (reference jans) * blank = c ommercial grade *available only on 1n5711 - 1 jedec type number (s ee e lectrical characteristic s t able ) rohs compliance e3 = rohs c ompliant (on commercial grade only) blank = non - rohs c ompliant metallurgical ly bond ed dsb 2810 (e3) diode schottky barrier series number (s ee electrical characteristic s t able ) rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant symbols & definitions symbol definition c capacitance: the capacitance in pf at a frequency of 1 mhz and specif ied voltage. f frequency i r reverse current: the dc current flowing from the external circuit into the cathode terminal at the specified voltage v r . i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz sine - wave input and a 180 degree conduction angle. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a p eak reverse current occurs. v (br) breakdown voltage: a voltage in the breakdown region. v f forward voltage: a positive dc anode - cathode voltage the device will exhibit at a specified forward current. v r reverse voltage: a positive dc cathod e - anode voltage below the breakdown region. v rw m working peak reverse voltage: the peak voltage excluding all transient voltages (ref jesd282 - b). also sometimes known historically as piv.
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 3 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 electrical characteristics @ 25 oc unless otherwise noted t ype number minimum breakdown voltage maximum forward voltage maximum forward voltage working peak reverse voltage maximum reverse leakage current maximum capacitance @ v r = 0 volts f = 1.0 mhz v ( br ) @ 10 a v f @ 1 ma v f @ i f v rw m i r @ v r c v olts volts v @ ma v (pk) na v olts pf 1n5711 - 1 70 0.41 1.0 @ 15 50 200 50 2.0 1n5712 - 1 20 0.41 1.0 @ 35 16 150 16 2.0 1n6857 - 1 20 0.35 0.75 @ 35 16 150 16 4.5 1n6858 - 1 70 0.36 0.65 @ 15 50 200 50 4 . 5 DSB2810 20 0.41 1.0 @ 35 16 100 15 2.0 dsb5712 20 0.41 1.0 @ 35 16 150 16 2.0
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 4 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 graphs v f ? forward voltage (v) figure 1 i - v curve showing typical forward voltage variation temperature for the 1n5712 - 1, dsb5712 and DSB2810 schottky diodes v r ? reverse voltage (v) (pulsed) figure 2 1n5712 - 1, dsb5712 and DSB2810 typical variation of reverse current (i r ) vs reverse voltage ( v r ) at various temperatures i r ? reverse current (na) i f ? forward current (ma)
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 5 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 graphs v f ? forward voltage (v) figure 3 i ? v curve showing typical forward voltage variation with temperature schottky diode 1n5711 v r ? reverse voltage (v) (pulsed) figure 4 1n5711 typical variation of reverse current (i r ) vs reverse voltage ( v r ) at various temperatures i f ? forward current (ma) i r ? reverse current (na)
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 6 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 graphs i f ? forward current (ma) (pulsed) figure 5 typical dynamic resistance (r d ) vs forward cur rent (i f ) r d ? dynamic resistance ( ohms )
t4 - lds - 0 040, rev . 4 ( 6/ 4 /13 ) ?201 3 microsemi corporation page 7 of 7 1n5711 - 1, 1n5712 - 1, 1n6857 - 1, and 1 n 6858 - 1 ; DSB2810 and dsb5712 package dimensions notes: 1. dimensions are in inches. millimeters are given for information only. 2. dimensions bl and ld includes all components of the diode periphery expect the section of the leads over which the diameter is co ntrolled. 3. dimension bd shall be measured at the largest diameter. 4. in accordance with asme y1.4m, diameters are equivalents to x symbology. dimensions symbol inches millimeters notes min max min max bd 0.068 0.076 1.73 1.93 2,3 bl 0.125 0.170 3.18 4.32 2 ld 0.014 0.022 0.36 0.56 ll 1.000 1.500 25.40 38.10
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